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以粉末靶为溅射源,采用射频磁控溅射法在玻璃衬底上制备掺铟氧化锌(ZnO∶In)透明导电膜。利用X射线衍射仪、原子力显微镜、霍尔测试仪,以及分光光度计等对不同衬底温度下生长的ZnO∶In薄膜的结构、光电性能进行表征。结果表明,所有制备的ZnO∶In薄膜均为六角纤锌矿结构的多晶膜,具有(002)择优取向。ZnO∶In薄膜的电阻率随着衬底温度的升高先减小后增大,当衬底温度为100℃时,薄膜的最低电阻率为3.18×10-3Ω.cm。制备的薄膜可见光范围内透过率均在85%以上。
Indium doped zinc oxide (ZnO: In) transparent conductive film was prepared on glass substrate by RF magnetron sputtering with powder target as sputtering source. The structures and optical properties of ZnO: In thin films grown at different substrate temperatures were characterized by X-ray diffraction, atomic force microscopy, Hall test, and spectrophotometer. The results show that all of the ZnO: In films prepared are polycrystalline films with hexagonal wurtzite structure with (002) preferred orientation. The resistivity of ZnO: In thin films decreases first and then increases with increasing substrate temperature. When the substrate temperature is 100 ℃, the lowest resistivity of the films is 3.18 × 10-3Ω.cm. The transmittance of the prepared film in the visible range is more than 85%.