TCAD相关论文
本文使用TCAD工具对AlGaN/GaN HEMT微波功率器件进行电学仿真，在其基本结构上分别引入栅场板、一重源场板、双重源场板结构，并优化了......
随着国产LDO器件在装备中的大量使用，为保障元器件应用可靠性，需针对LDO输出噪声指标测试方法进行研究。结合实际验证工作，基于TCAD仿......
随着半导体技术的快速发展,传统晶体管器件的特征尺寸不断微缩到达物理极限,实际发展速度已经落后于摩尔定律的预测速度,这对半导......
MOSFET器件的尺寸缩小带来较明显的短沟道效应、泄漏电流增大、功耗增加等问题,限制了集成电路的发展。由于受热力学输运玻尔兹曼......
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碳化硅（SiC）材料本身具有宽禁带、高击穿场强、高热导率以及高饱和电子漂移速率等优点,可以用于高压、高频、高功率及高温领域。相比......
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近年来,双电层晶体管（Electric-Double-Layer Transistors,EDLTs）作为一种新型器件,凭借其大电容、低电压、多栅调控等特点受到广泛......
磁随机存储器（MRAM）是一种基于电子自旋性质实现信息非易失性存储的新型存储设备,是下一代通用存储器解决方案的有力竞争者。本文针......
基于Al GaN/GaN HEMT工艺的射频功率放大器芯片,因为其良好的性能被广泛应用于各种先进设备中。但是作为功率器件,高温对器件性能......
随着集成电路发展,电路及芯片性能及低功耗的需求日益提升,这就要求器件性能的提高。为实现器件的高性能及低泄漏,器件设计者们一......
伴随着集成电路产业的高速发展,当前主流的半导体制造工艺已进入7nm尺寸。为了满足规模更大、速度更高、功耗更低的集成电路芯片的......
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CMOS图像传感器（CMOS image sensor,CIS）因具有低成本,低功耗,集成度高等优点而广泛应用于生产生活中。随着其应用范围不断扩大,在太......
The energy deposition and electrothermal behavior of SiC metal-oxide-semiconductor field-effect transistor (MOS-FET) und......
集成电路工艺已发展到5纳米节点,器件物理尺寸的持续缩减已难以满足市场对于电路性能和功耗的需求,研究者提出了多种新型低功耗半......
近三十年来,半导体技术的发展遵循着摩尔定律,即器件特征尺寸大概每两年缩短一半。尺寸微缩造成有源器件面临着严峻的自热效应,会......
为评估鳍式场效应晶体管(FinFET)的本征抗辐射能力,本文通过三维工艺计算机辅助设计(TCAD)仿真研究了14 nm FinFET工艺的单粒子瞬......
本文主要叙述了在ISE软件平台上对不同Al组分AlGaN/GaNHEMT的转移特性的模拟以及对模拟结果的分析.首先实现了在成熟的模拟软件中,......
近年来,低温多晶硅薄膜晶体管(Thin-Film Transistor,TFT)被广泛应用在平板显示领域,实现像素矩阵与驱动电路的板上集成。然而在实......
Trigger characteristics of electrostatic discharge(ESD)protecting devices operating under various ambient temperatures r......
GaAs基半导体材料凭借着其优良的性能,促使GaAs PHEMT（Pseudomorphic High Electron Mobility Transistor,赝高电子迁移率晶体管）器......
Using Geant4 Monte Carlo code and Technology Computer-Aided Design(TCAD) simulation,energy deposition and charge collect......
机车仪表配色实验在于考察表盘、指针和数符的不同配色对认读性的影响，由于在认读反应时间中含有多种成份，为将因配色不同而引起的差......
器件稳健性设计本质上是一个多个目标的优化问题 .将实验设计和响应表面方法相结合可用来满足减少所需的 TCAD模拟次数的强烈需求 ......
集成系统科技公司(ISE)宣布已经与 Sigma-C 公司进行合作,开发面向最新型半导体技术节点的处理和器件模拟工具。根据协议,Sigma-C......
集成系统科技公司 (ISE)宣布已经与 Sigma- C公司进行合作 ,开发面向最新型半导体技术节点的处理和器件模拟工具。根据协议 ,Sigma......
The temperature dependence of charge sharing in a 130 nm CMOS technology has been investigated over a temperature range ......
Influence of layout parameters on snapback characteristic for a gate-grounded NMOS device in 0.13-μm
Gate-grounded NMOS (GGNMOS) devices with different device dimensions and layout floorplans have been designed and fabric......
Based on the technology of low temperature poly silicon thin film transistors (poly-Si-TFTs), a novel p-type TFT AMOLED ......
We report the analysis and TCAD results of a gate-all-around cylindrical (GAAC) FinFET with operation based on channel a......
Simulation research on offset field-plate used as edge termination in 4H-SiC merged PiN-Schottky dio
A new structure of 4H-silicon carbide(SiC) merged PiN-Schottky(MPS) diodes with offset field-plate(FP) as edge terminati......
Degradation behaviors of 20 V NLDMOS operated under off-state avalanche breakdown conditions are presented.A constant cu......
This paper presents an improved analytical model for an RF-LDMOST structure based on the 2D Poisson equation.The derived......
With Shockley’s approximate-channel theory and TCAD tools,a high-voltage,ultra-shallow junction PJFET for the input sta......
Based on thermionic emission theory,a model of a 6H-SiC metal-semiconductor-metal(MSM) ultraviolet photodetector is esta......
研究了90nm CMOS工艺下浅槽隔离技术产生的x轴应力对NMOSFET电学性能的影响。用新一代集成工艺仿真软件Sentaurus TCAD对不同有源......
The physical mechanisms triggering electrostatic discharge(ESD) in high voltage LDMOS power transistors (>160 V) under t......
研究了高压LDMOS(lateral double-diffused MOS)晶体管中一种特殊的电流饱和现象——准饱和效应.借助于TCAD模拟工具,澄清了准饱和......
As a connection between the process and the circuit design,the device model is greatly desired for emerging devices,such......
Silicon germanium(SiGe) heterojunction bipolar transistor(HBT) on thin silicon-on-insulator(SOI) has recently been demon......
The planar edge termination techniques of junction termination extension (JTE) and offset field plates and field-limitin......
To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator(SGOI) n-type metal-oxide-semiconduct......
A study of the operating parameters and barrier thickness of Al_(0.08)In_(0.08)Ga_(0.84)N/Al_xIn_yGa
The operating parameters such as the internal quantum efficiency (ηi),internal loss (αi) and transparent threshold cur......
In this paper,a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode(MPS) is investigated,which is a combin......
This paper presents three new types of pulse quenching mechanism(NMOS-to-PMOS,PMOS-to-NMOS and NMOS-to-NMOS) and verifie......
The ability of high-voltage power MOSFETs to withstand avalanche events under different temperature conditions are studi......
A novel structure of a VDMOS in reducing on-resistance is proposed.With this structure,the specific on-resistance value ......
基于3维TCAD器件模拟,研究了90nmCMOS双阱工艺下p+深阱掺杂对电荷共享的影响.研究结果表明:改变p+深阱的掺杂浓度对PMOS管之间的电......
Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single ......
Through revising the process of charge collection for reversed drain-bulk junction,a bias-dependent SPICE model is propo......
为了在薄埋氧层SOI衬底上实现超高耐压LDMOS铺平道路,提出了一种具有P埋层(BPL)的薄埋氧层SOI LDMOS结构,耐压1200V以上。该BPL SO......
