针对40nm体硅工艺利用TCAD(Technology Computer Aided Design)对关键NMOS进行3D建模,采用混合仿真模型对SRAM单粒子效应进行模拟仿真。通过改变重离子LET(Linear Energy Transfer)值、入射位置和入射角度,分析了其对单粒子效应的影响。实验结果表明40nm工艺下单粒子效应各参数的变化与传统工艺一致。最后,基于R-C简化混合仿真模型,相比于混合仿真模型其电压、电流等参数具有较好一致性,验证了该模型对SRAM单粒子效应模拟的有效性。 Aiming at the 40nm bulk silicon process, TCAD (Technology Computer Aided Design) is used to 3D model the key NMOS. The mixed simulation model is used to simulate the single-particle effect of SRAM. By changing the value of LET (Linear Energy Transfer), the incident position and the angle of incidence, the effect on the single-particle effect has been analyzed. The experimental results show that the single-particle effect of 40nm process changes in the parameters consistent with the traditional process. Finally, based on the R-C simplified hybrid simulation model, compared with the hybrid simulation model, the voltage, current and other parameters are in good agreement, and the validity of this model to the simulation of SRAM single-particle effect is verified.