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用沟道—卢瑟福背散射技术(RBS)研宄了能量为50 KeV,剂量为3.8×10~(16)/cm~2和1.9×10~(16)/cm~2的~(40)Ar~+离子注入(111)硅衬底中的恒温等时热退火行为。结果表明,离子注入层中Ar 原子的扩散和释放以及非晶硅层的再结晶行为明显地依赖于~(40)Ar~+离子的注入剂量和退火温度。注入剂量为3.8×10~(16)/cm~2的样品,当退火温度为700℃时,表面层硅的密度明显减小,退火温度为750℃时,注入层中的大部分Ar 发生外扩散并从样品表面释放。注入剂量为1.9×10~(16)/cm~2的样品,退火过程中没有发现衬底硅表面密度的变化,而且当退火温度为900℃时,残留在注入层中的Ar 仍旧比较多。最后对这些现象进行了讨论和解释。
Using channel - Rutherford backscattering (RBS), the energy of 50 KeV, the dose of 3.8 × 10 ~ (16) / cm ~ 2 and 1.9 × 10 ~ (16) ) Isothermal Quenching Isothermal Annealing Behavior in (111) Si Substrate with Ar ~ + Ion Implantation. The results show that the diffusion and release of Ar atoms in the ion implanted layer and the recrystallization of the amorphous silicon layer are obviously dependent on the implantation dose and the annealing temperature of ~ (40) Ar ~ + ions. At a dose of 3.8 × 10 ~ (16) / cm ~ 2, when the annealing temperature is 700 ℃, the density of silicon in the surface layer obviously decreases. When the annealing temperature is 750 ℃, most of the Ar in the implanted layer Diffused and released from the surface of the sample. The samples with 1.9 × 10 ~ (16) / cm ~ 2 were implanted with no changes in the surface density of the Si substrate during the annealing process. However, when the annealing temperature was 900 ℃, the amount of Ar remaining in the implanted layer was still relatively high. Finally, these phenomena are discussed and explained.