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本文用背散射技术、霍尔效应和X光衍射法测量As离子注入多晶Si浅结工艺在制备D.I2902电路中的基本参数:As在多晶Si中的扩散系数、电阻率、迁移率和晶粒大小。对影响电路参数的多晶Si与单晶Si之间的界面氧化层、多晶Si厚度和晶粒大小作了较详细的分析,指出极薄界面氧化层的存在影响As从多晶Si向单晶Si的扩散,也有利于发射效率的提高。最后给出D.I2902电路的工艺流程和基本电参数。
In this paper, the back scattering, Hall effect and X-ray diffraction method to measure As ion implantation polycrystalline Si shallow junction process in the preparation of D.I2902 circuit basic parameters: As in polycrystalline Si in the diffusion coefficient, resistivity, mobility And grain size. The interfacial oxide, polycrystalline Si thickness and grain size between polycrystalline Si and monocrystalline Si that affect the circuit parameters are analyzed in detail. It is pointed out that the presence of ultrathin interfacial oxide affects As from polycrystalline Si to single The diffusion of Si also contributes to the improvement of the emission efficiency. Finally, D.I2902 circuit is given the process and the basic electrical parameters.