通过求解沟道与埋氧层的二维泊松方程,同时考虑垂直沟道与埋氧层方向的二阶效应,建立了高κ栅介质GeOI金属氧化物半导体场效应管(MOSFET)的阈值电压和亚阈斜率解析模型,研究了器件主要结构参数对器件阈值特性、亚阈特性、短沟道效应、漏极感应势垒降低效应及衬偏效应的影响,提出了优化器件性能的结构参数设计原则及取值范围,模拟结果与TCAD仿真结果符合较好,证实了模型的正确性与实用性。 By solving the two-dimensional Poisson’s equation of channel and buried oxide layer and considering the second-order effect of the vertical channel and buried oxide layer, the threshold voltage of the high-κ gate dielectric GeOI MOSFET (metal oxide semiconductor field effect transistor) And the subthreshold slope analysis model, the influence of the main structural parameters of the device on the device threshold characteristics, subthreshold characteristics, short-channel effect, drain sensing barrier reduction effect and liner bias effect was studied. The structural parameter design Principle and range of values, the simulation results are in good agreement with the TCAD simulation results, confirming the correctness and practicability of the model.