epitaxial相关论文
According to Maxwell’s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer h......
Pit formation and surface morphological evolution in Si(001) homoepitaxy are investigated by using scanning tunneling mi......
We give a brief introduction to the oxide (ZnO, TiO2 , In2O3 , SnO2 , etc.)-based magnetic semiconductors from fundament......
0.25 m Ga N HEMT with Al Ga N back barrier for high power switch application has been presented. By introducing Al Ga N ......
Chloride-based fast homoepitaxial growth of 4H-SiC epilayers was performed on 4° off-axis 4H-SiC substrates in a home-m......
A promising technology named epitaxy on nano-scale freestanding fin(ENFF) is firstly proposed for heteroepitaxy This tec......
Interfacial barrier is a key factor that determines the performances of heterojunctions.In this work,we study the effect......
We report the growth of InSb layers directly on GaAs(001) substrates without any buffer layers by molecular beam epitaxy......
采用金属有机化合物化学气相沉积(MOCVD)方法制备了不同AlN缓冲层厚度的GaN样品,研究了AlN缓冲层厚度对CaN外延层的应力、表面形貌......
利用脉冲激光沉积（ pulsed laser depositon， PLD）方法在YSZ（ Y2 O3 stabilised zirconia）单晶衬底上外延生长了Gd掺杂的CeO2薄膜（gadoli......
目前国内外在各种金属上电镀、蒸镀Cr或Cr、Au，是因为Cr耐磨损、抗腐蚀，与稀酸作用缓慢，与被镀件结合力强，有力地保护被镀件，提高被镀件......
