STRAINED相关论文
PIC-integrable,uniformly tensile-strained Ge-on-insulator photodiodes enabled by recessed SiN stress
Mechanical strain engineering has been promising for many integrated photonic applications. However,for the engineering ......
<正> In recent years, increasing attention has been given to unsaturated carbenes which provide a convenient way for the......
The phase-field crystal(PFC) model is employed to study the shape transition of strained islands in heteroepitaxy on vic......
Previously we have shown that POCl3-mediated H-bonding-directed one-pot macrocyclization allows for the highly selective......
Intrinsic carrier concentration(ni) is one of the most important physical parameters for understanding the physics of st......
The strained cyclopropane and/or cyclobutane subunits occurred in many complex natural products including terpenoids, st......
Effect of strain on space charge layer in GaN nanowires investigated by in-situ off-axis electron ho
Effect of strain on space charge(SC) layer in nanowires(NWs) has been examined by in situ off-axis electron holography, ......
We investigate quantum transport of carriers through a strained region on monolayer phosphorene theoretically.The electr......
Abstract: The optimum parameters are calculated by the large cross - section theory and mode cut - off equation. The eff......
Enhancement of Crystalline Quality of Strained InAs／InP Quantum Well Structures by Rapid Thermal Ann
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EnhancementofCrystallineQualityofStrainedInAs/InPQuantumWellStructuresbyRapidThermalAnalingXINGQJ; ZHANGB; WANGSM (......
Pure-Ge/Si short period superlattice (SPS) grown by gas source MBE (GSMBE) is studied by photoluminescence spectroscopy ......
The effects of the capping-layer thickness and the discrepancy of the numbers of misfit dislocations at the upper and l......
InGaAs/InGaAlAs Strain-compensated Multiple-quantum-well Lasers with Improved Temperature Characteri
It is reported on realization of pulsed operation of InGaAs/InGaAlAs straincompensated multiple-quantum-well lasers at r......
Using double crystal X-rays diffraction (DCXRD) and atomic force microscopy (AFM), the results of Ge x Si 1- x ......
Interfacial-Strain-Induced Structural and Polarization Evolutions in Epitaxial Multiferroic BiFeO_3(
Varying the film thickness is a precise route to tune the interfacial strain to manipulate the properties of the multife......
The average bond energy method is popularized and applied to study band offsets at strained layer heterojunctions. By ca......
The result of molecular beam epitaxy (MBE)-grown ridge-waveguide InGaAs/ InGaAsP/InP strained quantum well lasers at 2 ......
Lattice-matched InGaAs/lnP heterostructures have been grown by using metalorganic vapor phase epitaxy (MOVPE) with terti......
A fine polycrystalline ZnO thin film with 0.3～0.6 μm grain size was obtained by sol-gel process and a consequential heat......
用 6× 6 L uttinger- Kohn模型结合平面波展开方法计算了应变量子阱材料的价带结构 ,分析了用来展开的平面波的数目和周期对能量......
优化设计了 1.5 5 μm In Ga As P/In Ga As P张应变量子阱偏振不灵敏半导体光放大器的结构 .利用 k· p方法计算了多量子阱的价带......
Effect of growth interruption and strain buffer layer on PL performance of AlGaAs/GaAs/InGaAs quantu
Strained InGaAs/GaAs quantum well (QW) was grown by low-pressure metallorganic chemical vapor deposition (MOCVD). Growt......
Introduction. General Geology. Metamorphosed Submarine Pyroclastic Rocks of Tiehkuangshan. Rocks of the Taofu Volcanic ......
Highly strained InGaAs ridge waveguide lasers were fabricated with pulsed anodic oxidation. The laser structure was grow......
Characteristics measurement of gain and refractive index of traveling-wave semiconductor optical amp
A novel method to measure the gain and refractive index characteristics of traveling-wave semiconductor optical amplifie......
Strain-relaxed SiGe virtual substrates are of great importance for fabricating strained Si materials. Instead of using g......
A high power collimated diode laser stack is carried out based on fast-axis collimation and stack packaging techniques.T......
In the ultra-thin relaxed SiGe virtual substrates, a strained-Si channel p-type Metal Oxide Semiconductor Field Effect T......
According to Maxwell’s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer h......
650 nm AlGaInP/GaInP laser diodes with compressively strained MQW active layer have been successfully fabricated by mean......
Room temperature continuous wave operation of 1.33-um InAs/GaAs quantum dot laser with high output p
Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within......
在分子束外延生长的InAs/In0.52Al0.48As/InP异质结体系中,形成InAs量子线.这些InAs量子线在生长和结构方面有一些独到的特性,并介......
The electron states confined in wurtzite InxGa1-xN/GaN strained quantum dots (QDs) have been investigated in the effecti......
Si/SiGe P-channel Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) using P+ (phosphor ion) implantation techn......
The paper describes the growth of a germanium (Ge) film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buf......
980 nm InGaAs/GaAs separate confinement heterostructure (SCH) strained quantum well (QW) laser with non-absorbing facets......
Using two-step method InP epilayers were grown on GaAs(100)substrates by low-pressure metalorganic chemical vapor deposi......
The hole subband structures and effective masses of tensile strained Si/Si1yGey quantum wells are calculated by using th......
Hydrostatic pressure effect on the electron mobility in a ZnSe/Zn_(1-x)Cd_xSe strained heterojunctio
With a memory function approach, this paper investigates the electronic mobility parallel to the interface in a ZnSe/Zn1......
研究了应变Si沟道引入对薄膜全耗尽SOI MOSFET器件特性的影响,并分析了器件特性改进的物理机理。与传统的SOI MOSFET结构相比,器件......
Screening influence on the Stark effect of impurity states in strained wurtzite GaN/Al_xGa_(1-x)N he
The screening effect of the random-phase-approximation on the states of shallow donor impurities in free strained wurtzi......
A novel device structure with a vertical double-gate and dual-strained channel is presented.The electri-cal characterist......
Hole mobility changes under uniaxial and combinational stress in different directions are characterized and analyzed by ......
Fabrication of High Quality SiGe Virtual Substrates by Combining Misfit Strain and Point Defect Tech
High quality strain-relaxed thin SiGe virtual substrates have been achieved by combining the misfit strain technique and......
This paper describes a method using both reduced pressure chemical vapor deposition (RPCVD) and ultrahigh vacuum chemica......
A 1.3-μm wavelength vertical-mesa ridge waveguide mulitple-quantum-well (MQW) distributed feedback(DFB) laser with hig......
Within the effective-mass approximation, we calculated the influence of strain on the binding energy of a hydrogenic don......
Temperature effects on interface polarons in a strained(111)-oriented zinc-blende GaN/AlGaN heteroju
The properties of interface polarons in a strained(111)-oriented zinc-blende GaN/AlxGa1-xN heterojunc-tion at finite tem......
