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Crack-free Ga N/In Ga N multiple quantum wells(MQWs) light-emitting diodes(LEDs) are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the LED is achieved by using the through-hole structure. The widened embedded p-electrode covers almost the whole transparent conductive layer(TCL), which could not be applied in the conventional p-side-up LEDs due to the electrodeshading effect. Therefore, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are thereby reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 m A, in comparison to conventional LEDs on Si.
Crack-free GaN / InGaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) are transferred from Si substrate onto an electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the The widened embedded p-electrode covers almost the whole transparent conductive layer (TCL), which could not be applied in the conventional p-side-up LEDs due to the electrodehading effect. Thus, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 m A, in comparison to conventional LEDs on Si.