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从靶动力学和粒子输运导出了靶中毒的判据．建立的靶中毒模型能体现工艺参数对靶中毒的影响，从而对解决薄膜高速生长与组份匹配的矛盾，为设计新型无中毒反应室提供了理论依据。
Criteria for target poisoning are derived from target kinetics and particle transport. The established target poisoning model can reflect the influence of process parameters on target poisoning and thus provide a theoretical basis for the design of a novel non-toxic reaction chamber to solve the conflict between high-speed film growth and component matching.