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应用微波等离子体辅助的化学气相沉积(MPCVD)工艺成功地实现了金刚石薄膜在700-790℃范围内的低温沉积.发现氧在CH_4-H_2系统中的引入不仅可以减小或消除Raman谱上位于1550cm~(-1)的非金刚石特征峰,而且还使位于1332cm~(-1)的金刚石特征峰半高宽显著减小。正是由于原子态氧在较低温度下具有远比原子态氢强烈得多的对石墨和类金刚石碳的刻蚀作用,才用金刚石的低温生长得以顺利进行。本文详细报导了金刚石薄膜低温沉积工艺及其所得薄膜的表征结果,并就Bachmann等最近提出C-H-O金刚石相图针对低温沉积数据进行了讨论。
The deposition of diamond films at low temperature in the range of 700-790 ℃ has been successfully achieved by microwave plasma-assisted chemical vapor deposition (MPCVD) .It is found that the introduction of oxygen into CH_4-H_2 system can not only reduce or eliminate the Raman spectra 1550cm ~ (-1) non-diamond peak, but also significantly reduced the full width at half maximum (FWHM) of diamond peak located at 1332cm ~ (-1). Due to the etching of graphite and diamond-like carbon by atomic oxygen at a much lower temperature than the atomic hydrogen, the low-temperature growth of diamond can be successfully carried out. In this paper, the low temperature deposition of diamond thin films and the characterization of the obtained films are reported in detail. The low temperature deposition data of C-H-O diamond phase diagrams recently proposed by Bachmann et al. Are discussed.