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1.引言1958年Rcuhrwein提出了用金属烷基化合物制成薄膜的技术称为MOCVD法(金属有机化学汽相沉积),或称MOVPE(有机金属汽相外延)。1968年英国Hansevit开始对化合物半导体单晶的生长进行了多次试验,证实这种方法是一种高精度的薄膜生长技术。1971年Manasevit和Simpson最先报导了采用MOCVD法生长Ⅱ-Ⅵ化合物晶体
1. Introduction In 1958 Rcuhrwein proposed a technique of forming a thin film with a metal alkyl compound called MOCVD (Metal Organic Chemical Vapor Deposition) or MOVPE (Organometallic Vapor Deposition). In 1968, Britain Hansevit began several experiments on the growth of compound semiconductor single crystals, confirming that this method is a high-precision thin film growth technology. 1971 Manasevit and Simpson first reported the use of MOCVD growth of II-VI compound crystals