本刊04/9/P29已谈到“场效应管电极质量的判别方法”,但原文仅限于 N 沟道耗尽型的场效应管,尚有 N 沟道增强型、P 沟道场效应管并未提及。面对多种场效应管,单一种测试方法无法应对,且会引起误判。另外,原文中关于增强型场效应管的图形符号画法有误,这里一并补正。1.各种场效应晶体管(FET)的符号场效应管的符号、结构、导电类型及简要特性参见表1所示。其中的图形符号为基本的,有些大功率场效 We have talked about the “field-effect transistor quality of the judge,” but the original text is limited to N-channel depletion mode FET, there are N-channel enhancement, P-channel FET and Not mentioned. Faced with a variety of FETs, a single test method can not cope with, and will lead to miscarriage of justice. In addition, the original text on the enhancement of the FET’s graphical symbol drawing error, here together correction. 1. A variety of field-effect transistor (FET) Symbol FET symbol, structure, conductivity type and brief characteristics shown in Table 1. One of the basic symbols, some high-power field effect