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提出了一种新型晶体管的理论。这种晶体管为“场效应”型,即半导体层的电导率由一横向电场调制。由于其放大作用仅与一种载流子有关,因而称之为“单极”晶体管,以便同点接触和结型晶体管这类“双极”器件区别。由于颇象真空三极管,单极场效应晶体管可能具有10或更高的电压增益,输出阻抗高,频率响应也优于同样尺寸的双极晶体管。
Proposed a new type of transistor theory. This transistor is of the “field effect” type, ie the conductivity of the semiconductor layer is modulated by a transverse electric field. Because its amplification is only related to one type of carrier, it is called a “unipolar” transistor to distinguish it from “bipolar” devices such as point contact and junction transistors. Due to the fact that they are quite like vacuum transistors, unipolar FETs may have a voltage gain of 10 or higher, high output impedance, and better frequency response than bipolar transistors of the same size.