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介绍了铁电场效应晶体管 (FFET)的基本结构、存储机制、制作方法 ,综述其结构设计的改进、铁电薄膜在 FFET中应用的进展情况 ,探讨围绕铁电薄膜材料、过渡层、结构设计、不同成膜方法及工艺对 FFET存储特性的影响 ,对 FFET的研究现状和存在的一些问题进行评述
The basic structure, storage mechanism and fabrication method of ferroelectric field effect transistor (FFET) are introduced. The structural design of the ferroelectric field effect transistor (FFET) is reviewed. The application of ferroelectric thin film in FFET is reviewed. The characteristics of ferroelectric thin film material, transition layer, Effect of Different Film Formation Methods and Processes on the Storage Characteristics of FFETs, Reviewing the Current Research Status and Some Existent Problems of FFETs