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基于形变势理论,分析了应力下硅基半导体的禁带变窄效应和迁移率增强效应。建立了IGBT芯片模型,研究了应力对IGBT电性能的影响,分析了IGBT的应力来源,可为IGBT应力控制提供一定的参考。
Based on the deformation potential theory, the forbidden band narrowing effect and mobility enhancement effect of silicon-based semiconductors under stress are analyzed. The IGBT chip model is established and the influence of stress on the electrical performance of IGBT is studied. The stress source of IGBT is analyzed, which can provide some references for the stress control of IGBT.