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用真空共蒸发法沉积了ZnTe和ZnTe：Cu多晶薄膜，研究了Cu含量对薄膜结构和电学性能的影响．发现刚沉积的ZnTe薄膜和轻掺杂的ZnTe:Cu薄膜的结构均为高度（111）择优取向的立方相．掺杂浓度较高的ZnTe：Cu薄膜除了立方相外，还存在六方相．重掺杂薄膜中（111）择优取向消失．在ZnTe：Cu薄膜中观察到反常的暗电导温度关系曲线．薄膜的光学能隙在2.15～2.21eV之间．用结构相变的观点对实验现象作了解释．
The ZnTe and ZnTe: Cu polycrystalline thin films were deposited by vacuum co-evaporation, and the influence of Cu content on the structure and electrical properties of the films was investigated. It was found that the structures of the as-deposited ZnTe thin films and the lightly doped ZnTe: Cu thin films were both highly (111) preferred oriented cubic phases. In addition to the cubic phase, there is a hexagonal phase in the ZnTe: Cu film with higher doping concentration. The preferred orientation of (111) in heavily doped films disappears. Anomalous dark conductance temperature dependence was observed in ZnTe: Cu films. The optical energy gap of the film is between 2.15 ~ 2.21eV. The experimental phenomenon has been explained from the viewpoint of structural phase transition.