引言在资料所报道的多数研究工作中,将锌或镉受主扩散入n型衬底,是InSb形成pn结的最常用方法。近期研究表明,以反向电流小作主要标准时,扩散Cd的衬底与扩散Zn的衬底相比,前者制成的二极管电性能较好。所报导的方法通常采用不同的Zn或Cd扩散源,例如锌元素、镉锌或镉铟合金,在单一温度的密闭安瓿中进行扩散。 INTRODUCTION In most studies reported in the literature, diffusion of zinc or cadmium into an n-type substrate is the most common method for forming a pn junction in InSb. Recent studies show that the reverse current is small as the main criterion, the proliferation of Cd substrate Zn substrate diffusion compared to the former made of the diode better electrical properties. The reported methods typically use different Zn or Cd diffusion sources such as zinc, cadmium zinc or cadmium indium alloy for diffusion in a single ampoule temperature.