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通过优化张应变量子阱外延结构和设计线列阵双沟道深隔离槽腐蚀工艺,采用低压金属有机化学气相沉积法(LP-MOCVD)生长了GaAsP/GaInP/AlGaInP单量子阱分别限制异质结激光器材料,并利用该材料制备了填充因子为50%的1cm宽线列阵激光巴条,用扫描电子显微镜(SEM)分析了隔离槽的形貌.在准连续工作条件(200μs脉宽,2%占空比)下,封装在被动制冷标准铜热沉上的器件在测试设备允许的最大驱动电流300A时可获得259W的输出功率,未观察到腔面光学灾变性损伤的发生.最高功率转换效率在工作电流为104A时达52%,此时输出功率为100W,激射光谱的中心波长为807.8nm,半高宽为2.4nm,快慢轴远场发散角分别为29.3°和7.5°.
The GaAsP / GaInP / AlGaInP single quantum well confinement heterojunction is grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) through the optimization of the tensile strain quantum well epitaxial structure and the design of double- Laser material and a 1 cm wide linear array laser bar with a 50% fill factor was prepared by using this material. The morphology of the isolation groove was analyzed by scanning electron microscope (SEM). Under quasi continuous working conditions (200μs pulse width, 2 % Duty cycle), devices packaged on passive-cooled standard copper heat sinks achieved an output power of 259W at a maximum drive current of 300A allowed by the test equipment and no occurrence of optical catastrophic damage to the cavity surface was observed. Maximum Power Conversion The efficiency reaches 52% when the operating current is 104A, and the output power is 100W at this time. The central wavelength of the laser spectrum is 807.8nm and the FWHM is 2.4nm. The far-field divergence angles of the fast and slow axes are 29.3 ° and 7.5 °, respectively.