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报道了掺杂在GaAs体材料中和δ掺杂在一系列GaAs/AlAs多量子阱中的Be受主带间跃迁的光致发光.实验所用样品,GaAs体材料中均匀掺杂Be受主的外延单层和一系列量子阱宽度从3到20nm,并在量子阱中央进行了Be受主δ掺杂的GaAs/AlAs多量子阱样品都是通过分子束外延技术制备的.在4,20,40,80及120K不同温度下,分别对上述样品进行了光致发光谱的测量,清楚地观察到了受主束缚激子从1S3/2(Γ6)基态到同种宇称2S3/2(Γ6)激发态的两空穴跃迁,并从实验上得到了不同量子阱宽度下Be受主从1S3/2(Γ6)到2S3/2(Γ6)态的带间跃迁能量.理论上利用变分原理,在单带有效质量模型和包络函数近似下,数值计算了Be受主1S3/2(Γ6)→2S3/2(Γ6)的跃迁能量随量子阱宽度的变化关系,比较发现理论计算和实验结果符合较好.
Reported the photoluminescence of Be intercalator transitions doped in GaAs bulk materials and δ-doped in a series of GaAs / AlAs multiple quantum wells.The experimental samples were uniformly doped with Be acceptor GaAs / AlAs multiple quantum well samples with epitaxial monolayers and a series of quantum wells with widths of 3 to 20 nm and Be acceptor δ-doping in the center of the quantum well were prepared by molecular beam epitaxy. At 4, 20, The photoluminescence spectra of these samples were measured at different temperatures of 40, 80 and 120K respectively. It was clearly observed that the host bound excitons changed from 1S3 / 2 (Γ6) ground state to the same parity 2S3 / 2 (Γ6) Excited transitions of two holes and experimentally obtained the transition energies of Be from 1S3 / 2 (Γ6) to 2S3 / 2 (Γ6) under different quantum well widths.In theory, using variational principle, Under the single-band effective mass model and the envelope function approximation, the relationship between the energy of Be acceptor 1S3 / 2 (Γ6) → 2S3 / 2 (Γ6) and the width of the quantum well is numerically calculated. The theoretical calculations and experimental results In line with the better.