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提出了一种用限定室进行AlGaAs和GaAs开管Zn扩散的新方法。在700℃下,把Zn在GaAs和Al_xGa_(1-x)As (0.1≤x≤0.5)的扩散深度和质量与闭管扩散结果作了比较。发现这种新工艺能很好的控制扩散深度,并可作浅结扩散。比电阻率及表面载流子浓度用范德堡(Van der Pauw)法测量。扩散质量受所选用的溶剂金属的影响。讨论了几种溶剂金属的一些变化。可用这种工艺改进单片集成光学器件的欧姆接触。
A new method for the diffusion of AlGaAs and GaAs open-drain Zn by confinement chamber is proposed. The diffusion depth and mass of Zn in GaAs and Al_xGa_ (1-x) As (0.1≤x≤0.5) were compared with the results of closed-tube diffusion at 700 ° C. Found that this new technology can well control the depth of diffusion, and can be used as a shallow junction proliferation. Specific resistivities and surface carrier concentrations were measured by the Van der Pauw method. The quality of diffusion is affected by the solvent metal chosen. Several variations of several solvent metals are discussed. This process can be used to improve the ohmic contact of monolithically integrated optics.