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采用热壁化学气相沉积法在4英寸4H-Si C衬底上进行同质外延生长,研究硅烷流量、温度的变化对外延生长速率、表面形貌以及表面缺陷的影响。外延生长速率最高达到26.8μm/h,优化后在22μm/h的生长速率上获得表面光滑的外延层。通过原子力显微镜分析,优化后的外延层表面粗糙度达到0.12 nm;通过表面缺陷测试仪分析,优化后的外延层表面缺陷密度达到0.36 cm–2。研究发现,温度变化会对表面粗糙度以及表面缺陷有很大的影响,通过提高温度可获得无硅滴、低缺陷密度的高质量碳化硅外延材料。
Homogeneous epitaxial growth was carried out on 4-inch 4H-Si C substrate by hot wall chemical vapor deposition to study the influence of silane flow rate and temperature on epitaxial growth rate, surface morphology and surface defects. The maximum epitaxial growth rate was 26.8μm / h, and the surface was smooth epitaxial layer after optimization at 22μm / h growth rate. By AFM analysis, the surface roughness of the optimized epitaxial layer reaches 0.12 nm. The surface defect density of the optimized epitaxial layer reaches 0.36 cm-2 by surface defect tester. The study found that the temperature changes will have a great impact on the surface roughness and surface defects, by increasing the temperature can be obtained without silicon droplets, low defect density of high-quality silicon carbide epitaxial material.