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在SIMOX衬底上制备了H形栅和环形栅PDSOInMOSFETs,并研究了浮体效应对辐照性能的影响 .在10 6rad(Si)总剂量辐照下 ,所有器件的亚阈特性未见明显变化 .环形栅器件的背栅阈值电压漂移比H型栅器件小33% ,其原因是碰撞电离使环形栅器件的体区电位升高 ,在埋氧化层中形成的电场减小了辐照产生的损伤 .浮体效应有利于改进器件的背栅抗辐照能力 .
The H-shaped gate and the ring gate PDSOInMOSFETs were fabricated on SIMOX substrate and the effects of floating body effect on the irradiation performance were studied. The subthreshold characteristics of all the devices did not change significantly under the total dose of 10 6 rad (Si). The back gate threshold voltage drift of the ring gate device is 33% smaller than that of the H gate device due to the impact ionization causing the body region potential of the ring gate device to rise and the electric field formed in the buried oxide layer to reduce the damage caused by the irradiation The buoyancy effect helps to improve the device’s back gate resistance to radiation.