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使用薄 Ge-GaAs 结构,所得到的势垒高度降低了0.2～0.3电子伏。当本振功率为0.75—1.0毫瓦时,这些 X 波段二极管的噪声系数为6.0～6.5分贝。带有 Pt-Ti-Mo-Au 金属化的这种二极管具有优良的功率处理能力。
With a thin Ge-GaAs structure, the resulting barrier height is reduced by 0.2 to 0.3 electron volts. The noise figure for these X-band diodes is 6.0 to 6.5 dB at LO powers of 0.75-1.0 milliwatts. This diode with Pt-Ti-Mo-Au metallization has excellent power handling capability.