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随着CMOS工艺的发展,栅介质层厚度不断减薄,而电源电压并没有等比例缩小,导致栅漏电流不断增大,测量界面态的传统方法受到限制。介绍了电荷泵技术在表征深亚微米和超深亚微米器件Si/SiO2界面特性方面的应用;详述如何测量界面态和氧化层陷阱电荷的横向分布、能量分布和体陷阱深度分布;分析了当前电荷泵技术存在的问题和面临的挑战,提出通过抵消直接隧穿电流的影响,对电荷泵电流进行修正,使电荷泵技术能够在不同工艺下得到广泛应用。
With the development of CMOS technology, the thickness of the gate dielectric layer is continuously reduced, and the power supply voltage is not reduced proportionally, which results in the increase of the gate-drain current and the conventional method of measuring the interface state. The application of charge pump technique in the characterization of Si / SiO2 interface between deep sub-micron and ultra-deep submicron devices is introduced. The lateral distribution, energy distribution and bulk trap depth distribution of interfacial state and oxide trap charge are described in detail. Current charge pump technology problems and challenges, proposed by offsetting the direct tunneling current, the charge pump current correction, the charge pump technology can be widely used in different processes.