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二极管是定向检波器的重要组件,提高定向检波器的检波灵敏度,需要降低二极管的开启电压。而平面掺杂势垒(PDB)二极管具有极低的势垒高度,适合制作定向检波器。设计了GaAs平面掺杂势垒二极管的材料结构,并采用金属有机化合物气相淀积(MOCVD)方法对其进行外延生长。对PDB二极管的物理模型进行了理论分析。通过模拟计算和实验分析了本征层厚度和p层的面电荷密度对PDB二极管I-V特性的影响。通过实验设计优化了材料结构参数,测试了其I-V特性,使PDB二极管的开启电压降低到了0.06 V,将此样品应用到定向检波器中测得检波灵敏度为20~25 mV/mW。
Diode is an important component of the directional detector, improve the detection sensitivity of the directional detector, the need to reduce the diode turn-on voltage. Planar doped barrier (PDB) diodes have a very low barrier height and are suitable for making directional detectors. The material structure of the GaAs planar doping barrier diode is designed and epitaxially grown by metal organic compound vapor deposition (MOCVD). The physical model of PDB diode is analyzed theoretically. The influence of the intrinsic layer thickness and the surface charge density of p layer on the I-V characteristics of PDB diode is analyzed by simulation and experiment. The structure parameters were optimized through experimental design. The I-V characteristic was tested. The PDB diode turn-on voltage was reduced to 0.06 V. When this sample was applied to a directional detector, the detection sensitivity was 20-25 mV / mW.