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ROHM公司的2代SiC MOSFET SCT2080KEC/SCH2080KE实现SiC-SBD与SiC-MOSFET的一体化封装。内部二极管的正向电压(VF)降低70%以上,实现更低损耗的同时还可减少部件个数。此次,ROHM通过改善晶体缺陷相关工艺和元件构造,成功地攻克了包括体二极管在内的可靠性方面的所有课题。而且,与传统产品相比,单位面积的导通电阻降低了约30%,实现了芯片尺寸的小型化。另外,通过独创的安装技术,还成功将传统上需要外置的SiC-SBD一体化封装,使SiC-MOSFET的体二极
ROHM company’s second generation SiC MOSFET SCT2080KEC / SCH2080KE SiC-SBD and SiC-MOSFET integrated package. The internal diode reduces forward voltage (VF) by more than 70%, allowing for lower losses while reducing component count. This time, ROHM succeeded in solving all the issues including the reliability of the body diode by improving the related process and element structure of the crystal defect. Moreover, the on-resistance per unit area is reduced by about 30% compared to conventional products, enabling miniaturization of the chip size. In addition, the original installation technology, but also the traditional success of the external SiC-SBD will be integrated package, so SiC-MOSFET body diode