硅的微缺陷控制 1.硅晶体生长过程中微缺陷的消除 如本文第一部分所述,为了制作超大规模集成电路,必须进一步提高电路芯片的成品率,明确降低微缺陷密度的重要性。 为此,我们首先试验了在单晶生长阶段消除对器件有恶劣影响的微缺陷。图8示出了FZ法(悬浮区熔法)生长单晶情况,图中横座标为晶体生长速度,纵座 Micro-defect control of silicon 1. Micro-defect elimination during the growth of silicon crystal As mentioned in the first part of this paper, in order to fabricate very large scale integrated circuit, the yield of the circuit chip must be further improved and the importance of reducing the micro-defect density must be clarified. For this reason, we first tested for the elimination of microdefects that adversely affect the device during single crystal growth. Figure 8 shows the FZ method (suspension zone melting method) growth of single crystal case, the abscissa of the figure for the crystal growth rate, longitudinal