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提出了注氢硅片表面借助键合氧化硅片进行剥离的热动力学模型 ,这种剥离现象是退火过程中氢离子注入区氢气泡横向增长的结果 .氢气泡的增长速率依赖于氢复合体分解和氢分子扩散所需的激活能 ,氢气泡的半径是退火时间、退火温度和注氢剂量的函数 .氢气泡的临界半径可根据 Griffith能量平衡条件来获得 .根据氢气泡增长的这一临界条件 ,获得了不同劈裂温度时所需的剥离时间
A thermodynamic model was proposed for the surface of hydrogen-implanted silicon wafers which was peeled off by the bonded silicon oxide wafer. This delamination was the result of the lateral growth of hydrogen bubbles in the hydrogen ion implanted region during annealing. The growth rate of hydrogen bubbles depends on the hydrogen recombination The activation energy required for decomposition and diffusion of hydrogen molecules, the radius of the hydrogen bubbles is a function of the annealing time, annealing temperature and the amount of hydrogen injection.The critical radius of the hydrogen bubbles can be obtained according to the Griffith energy balance conditions.According to this threshold of hydrogen bubble growth Conditions, obtained at different splitting temperatures required for the peeling time