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分析了栅槽深度对AlGaN/GaN HEMT特性的影响,并对不同栅槽深度的器件特性进行了模拟,得到了器件饱和电流、最大跨导和阈值电压随栅槽深度的变化规律.当槽栅深度增大,器件饱和电流逐渐下降,而最大跨导逐渐增大,阈值电压向X轴正方向移动.研制出不同栅槽深度的蓝宝石衬底AlGaN/GaN HEMT,用实验数据验证了得到的不同栅槽深度器件特性变化规律.从刻蚀损伤和刻蚀引入界面态的角度分析了模拟与实验规律产生差别的原因.
The influence of gate depth on the characteristics of AlGaN / GaN HEMT was analyzed, and the device characteristics at different gate depths were simulated and the variation law of device saturation current, maximum transconductance and threshold voltage with gate depth was obtained. The saturation current of the device gradually decreases and the maximum transconductance increases gradually and the threshold voltage moves to the positive direction of the X axis.The sapphire substrate AlGaN / GaN HEMT with different gate depth has been developed, and the experimental data have been used to verify the difference The characteristics of gate-depth variation are analyzed.The reason of the difference between simulation and experimental rule is analyzed from the point of view of interface damage introduced by etching and etching.