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γ-LiAlO2与GaN的晶格失配很小,易于分离,在其(100)面上能生长出无极性的GaN,是一种很有希望的GaN衬底材料。结合γ-LiAlO2的基本性质,详细介绍了γ-LiAlO2衬底上用各种方法生长GaN的研究进展。
The lattice mismatch between γ-LiAlO2 and GaN is very small and easy to separate. It is a promising GaN substrate material that can grow nonpolar GaN on its (100) surface. Combined with the basic properties of γ-LiAlO2, the progress of GaN grown on γ-LiAlO2 substrate by various methods is introduced in detail.