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在就地XPS测量时采用0～20eV的电子来对生长在硅〈100〉衬底上的器件优质栅氧化物(～850(?))进行辐射。由于采用了湿纯化学深度剖面法,因此这些结构已被逐渐减薄到25～60(?)。根据氧化物/衬底密度比分析法,推导出了这些结构原子密度(D)和电子平均自由程(λ)的乘积是深度的函数。也验证了空穴捕获系数变化范围宽的样品。另外,Si~(+3)形式是在Si/SiO_2界面处形成,并且只有在它们衰减和消失过程中才能观察到。这些形成物和呈现在界面处的被损伤的Si-O-Si键有关。对硬结构与软结构的辐射在界面处表现出不同的损伤键分布。这些样品的键分离和健损伤变化率的直观现象被用来扩展硅的不透明性,从而解释了固定氧化物和界面态电荷的产生。表明了这个键损伤变化率(BSG)模型是与种种实验性EPR以及离子辐射而产生的空穴、电子陷阱的电观察结果相一致。
High-quality gate oxide (~ 850 (?)) Of a device grown on a silicon <100> substrate is irradiated with 0~20 eV electrons in situ XPS measurement. These structures have been thinned to 25-60 (?) Due to the wet-chemical profiling method. According to the oxide / substrate density ratio analysis, it is deduced that the product of the density of these structural atoms (D) and the electron mean free path (λ) is a function of depth. Samples with a wide variation of the hole trapping coefficient were also verified. In addition, the Si ~ (+3) forms are formed at the Si / SiO 2 interface and are only observed during their decay and disappearance. These formations are associated with damaged Si-O-Si bonds present at the interface. Radiation of hard and soft structures shows different distribution of damaged bonds at the interface. The visualization of bond separation and rate of change of the lesion in these samples was used to extend the opacity of the silicon, thus explaining the generation of fixed oxides and interfacial charges. It is shown that this key damage rate of change (BSG) model is consistent with the electrical observations of holes and electron traps generated by various experimental EPRs and ionizing radiation.