用 Ｔｉ Ｃｌ４ 作 原料 ，通 过 溶 胶凝胶 法 在 单 晶 硅 基 片 上 制 备 了 Ｔｉ Ｏ２ 纳 米 薄 膜， 并 用 Ｘ Ｒ Ｄ， Ａ Ｅ Ｓ， Ｘ Ｐ Ｓ 以及紫 外反射光 谱等手段 ，对 Ｔｉ Ｏ２ 薄膜的结 构进 行了 研究． 结 果发 现， Ｔｉ Ｏ２ 薄膜 以锐钛矿型 晶相存在 ． Ｔｉ Ｏ２ 薄膜层与 硅衬底 间无明显 的 界面 扩散 反 应． 掺杂 的 Ｐｄ 在 还原 前的 薄 膜中以氧化 态存在 ，还原后则 以高分 散的金属 态存在 ． 掺 杂的 Ｐｔ 在还 原前 后 均以 金 属态 存在 ，但 还原后产生 颗粒聚 集． 掺 杂 Ｐｄ 的 Ｔｉ Ｏ２ 薄膜经 还原后，其 紫外吸 收强度明 显提高 ，主吸收峰 发生红 移 TiCl4 nanocomposite films were prepared by sol-gel method using TiCl4 as raw materials. The structure of Ti O2 thin films was characterized by XRD, AES, XPS and UV reflection spectroscopy Were studied. As a result, it was found that the Ti O2 film exists in an anatase-type crystal phase. There is no obvious interfacial diffusion reaction between Ti O2 film and silicon substrate. Doped Pd is present in an oxidized state in the thin film before reduction and in a highly dispersed metal state after reduction. The doped Pt exists in a metallic state both before and after reduction, but results in particle aggregation after reduction. After reduction, the UV absorption intensity of Pd-doped Ti O2 film is obviously increased, and the main absorption peak is red-shifted