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原子自发辐射效率的提高对单光子源等光电子设备的研究和制造具有重要的意义.本文推导了自发辐射率和局域态密度的格林函数表示形式,通过频域有限差分法求解格林函数,得到自发辐射率的数值特性.分析了在不同金属材料、结构以及辐射波长下的自发辐射率,探讨了其内在的物理机理,结果表明:特定波长下介质的表面等离激元效应会增强自发辐射,不同材料和结构对辐射效率的提高有不同的影响.该研究结果可为新型纳米器件及光电子设备的制造以及优化提供重要的参考.
The improvement of atomic spontaneous emission efficiency is of great significance for the research and manufacture of single photon source and other optoelectronic devices.In this paper, the green function representation of spontaneous emissivity and local density of states is deduced, and Green’s function is solved by the finite difference frequency domain method, The spontaneous emissivity of spontaneous emissivity is analyzed.The spontaneous emissivity under different metallic materials, structure and radiation wavelength is analyzed, and its intrinsic physical mechanism is discussed.The results show that the surface plasmon effect of the media at specific wavelength will enhance the spontaneous emission , And different materials and structures have different effects on the improvement of radiation efficiency.The results of this study can provide important references for the fabrication and optimization of novel nanodevices and optoelectronic devices.