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650 nm AlGaInP/GaInP laser diodes with compressively strained MQW active layer have been successfully fabricated by means of single epitaxy growth.The threshold current is 6.4 mA,at 40 mA CW operation,the fundamental transverse-mode still remains,and the output power and the slope efficiency can reach 34 mW and 1.1 mW/mA respectively.The dead output power in CW operation can reach 66 mW at a saturation current of 88 mA.During 200 h burn in test,the laser diodes show good stabilization with a degradation of less than 8%.
650 nm AlGaInP / GaInP laser diodes with compressively strained MQW active layer have been successfully fabricated by means of single epitaxy growth. The threshold current is 6.4 mA at 40 mA CW operation, the fundamental frequency-mode still remains, and the output power and the slope efficiency can reach 34 mW and 1.1 mW / mA respectively. The dead output power in CW operation can reach 66 mW at a saturation current of 88 mA. Burning 200 h burn in test, the laser diodes show good stabilization with a degradation of less than 8%.