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以硅材料衬底作栅电极,在衬底上依次制备二氧化硅栅介质层、聚合物MEH-PPV薄膜半导体层和金源、漏电极,成功地得到了聚合物薄膜晶体管。器件的制备和测试都是在空气环境中完成。该薄膜晶体管呈现出较好的场效应晶体管饱和特性,器件的载流子迁移率为5.0×10-5cm2/(V.s),开关电流比大于2×103。通过在氮气氛下对聚合物薄膜进行退火处理以及聚合物薄膜沉膜前对二氧化硅表面修饰可以适当地提高器件的载流子迁移率。
A silicon substrate is used as a gate electrode, a silicon dioxide gate dielectric layer, a polymer MEH-PPV thin film semiconductor layer, a gold source and a drain electrode are sequentially prepared on a substrate, and a polymer thin film transistor is successfully obtained. Device preparation and testing are done in the air. The thin film transistor has good field effect transistor saturation characteristics. The carrier mobility of the device is 5.0 × 10 -5 cm 2 / (V.s), and the switching current ratio is more than 2 × 10 3. The carrier mobility of the device can be properly increased by annealing the polymer film in a nitrogen atmosphere and modifying the surface of the silicon dioxide before the polymer film is submerged.