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该工作采用光电子能谱、扫描电镜等方法研究了溅射镀膜条件对成膜质量的影响,说明溅射制膜时氧化压不能超过13%,同时氧分压过低也对电子加速不利。
In this work, the influence of sputtering conditions on the film quality was studied by means of photoelectron spectroscopy (SEM) and scanning electron microscopy (SEM). The results show that the oxidation pressure can not exceed 13% during the sputtering process and the oxygen partial pressure is too low.