用苯作源气体在一个微波电子回旋共振等离子体系统中沉积了含氢非晶碳薄膜 ,研究了沉积参数对膜的生长速率的影响。为了探索该种薄膜在干刻蚀工艺过程中用作掩膜的可能性 ,还研究了它在氧等离子体中的刻蚀性能。结果表明非晶碳膜对于氧等离子体具有高的抗刻蚀性 ,其刻蚀率不仅与刻蚀的过程参量有关 ,而且决定于膜的沉积条件。 Hydrogen-containing amorphous carbon films were deposited in a microwave electron cyclotron resonance plasma system using a benzene source gas, and the effect of deposition parameters on the growth rate of the film was investigated. In order to explore the possibility of using this film as a mask in a dry etching process, its etching performance in oxygen plasma was also studied. The results show that the amorphous carbon film has high etching resistance to oxygen plasma. The etching rate is not only related to the process parameters of the etching, but also depends on the deposition conditions of the film.