论文部分内容阅读
通过在不同温度下氨化ZnO/Ga2O3膜,在Si衬底上成功制备了GaN纳米结构材料。氨化前,ZnO层和Ga2O3膜分别通过射频磁控溅射法依次溅射到Si衬底上。用X射线衍射(XRD)、红外傅里叶变换光谱(FTIR)分析了GaN晶体的结构和组分,利用扫描电子显微镜(SEM)观察了样品的形貌。通过对测试结果的分析可知在Si衬底上由ZnO挥发辅助生长出六方纤锌矿GaN纳米结构晶体,并且ZnO/Ga2O3的氨化温度对形成GaN纳米材料具有明显的影响。
The GaN nanostructured materials were successfully fabricated on Si substrates by ammoniating ZnO / Ga2O3 films at different temperatures. Before ammoniation, the ZnO layer and the Ga2O3 film were sequentially sputtered onto the Si substrate by RF magnetron sputtering. The structure and composition of the GaN crystal were analyzed by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). The morphology of the GaN crystal was observed by scanning electron microscopy (SEM). Through the analysis of the test results, it can be seen that the hexagonal wurtzite GaN nanostructured crystal is assisted by the ZnO volatilization on the Si substrate, and the ammoniation temperature of ZnO / Ga2O3 has a significant effect on the formation of GaN nanomaterials.