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采用溶胶-凝胶法(Sol-Gel)和旋涂法制备了未掺杂的ZnSnO3薄膜和掺入不同物质的量的Sb的ZnSnO3薄膜。采用X射线衍射(XRD)、场发射扫描电镜(FE-SEM)、X射线光电子能谱(XPS)、霍尔效应仪(Hall)以及紫外-可见光(UV-Vis)等表征了热处理后薄膜的晶相、微观形貌、晶格缺陷、电学性能以及紫外-可见光透过率。结果表明:所有薄膜都是ZnSnO3结构;与未掺Sb的ZnSnO3薄膜相比,掺入Sb后的ZnSnO3薄膜的电阻率都有不同程度的降低,其中掺入8mol%Sb的薄膜具有最低的电阻率0.96Ω·cm;缺陷研究表明:Sb的掺入使得晶格中的间隙锌离子含量增加,这有利于薄膜电阻率的降低;薄膜的紫外-可见光(UV-Vis)表明:在波长大于475 nm的可见光范围内,掺入Sb的ZnSnO3薄膜的可见光透过率都在80%以上。
An undoped ZnSnO3 thin film and an SbSb doped ZnSnO3 thin film doped with different substances were prepared by sol-gel method and spin-coating method. The films were characterized by XRD, FE-SEM, XPS, Hall and UV-Vis. Crystal phase, microstructure, lattice defects, electrical properties and UV - Visible transmittance. The results show that all the films are of ZnSnO3 structure. Compared with the undoped ZnSnO3 thin films, the resistivity of ZnSnO3 thin films doped with Sb is reduced to some extent. The films doped with 8mol% Sb have the lowest resistivity 0.96Ω · cm. The defect studies show that the incorporation of Sb increases the interstitial zinc ion content in the crystal lattice, which is conducive to the reduction of the resistivity of the film; UV-Vis of the film shows that: at a wavelength greater than 475 nm Of the visible light range, ZnSnO3 doped Sb thin films have visible light transmittance of more than 80%.