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研究对比了不同清洗工艺对制绒Si片性能的影响,采用原子力显微镜和少子寿命测试仪测试经不同化学清洗工艺处理之后的Si片表面微粗糙度和少子寿命。研究发现,使用浓硫酸、双氧水混合液和稀释的氢氟酸溶液清洗Si片能够有效改善Si片表面的质量,Si片表面的微粗糙度由原先的5.96μm降低到4.45μm;采用等离子体增强化学气相沉积法在清洗之后的Si片上生长本征氢化非晶Si层,对Si片进行表面钝化,钝化之后的Si片少子寿命可达107.88μs。测试结果还表明,采用此种清洗方法处理的Si片少子寿命稳定性有很大提高。
The effects of different cleaning processes on the properties of textured Si films were compared and studied. The atomic roughness microscopy and the minority life tester were used to test the micro-roughness and the minority lifetime of Si films after different chemical cleaning processes. The results show that the Si wafer can be effectively cleaned by using concentrated sulfuric acid, hydrogen peroxide solution and dilute hydrofluoric acid solution to improve the surface quality of Si wafer. The micro-roughness of the surface of Si wafer is reduced from 5.96μm to 4.45μm. Plasma enhanced The chemical vapor deposition method is used to grow the intrinsic hydrogenated amorphous Si layer on the cleaned Si wafer and passivated the surface of the Si wafer. The lifetime of the Si wafer after inactivation can reach 107.88 μs. Test results also show that using this cleaning method of Si chip minority life stability has greatly improved.