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针对功率集成电路对低损耗LDMOS(lateral double-diffused MOSFET)类器件的要求,在N型缓冲层super junction LDMOS(buffered SJ-LDMOS)结构基础上,提出了一种具有N型缓冲层的REBULF(reduced BULk field)super junction LDMOS结构.这种结构不但消除了N沟道SJ-LDMOS由于P型衬底带来的衬底辅助耗尽效应问题,使super junction的N区和P区电荷完全补偿,而且同时利用REBULF的部分N型缓冲层电场调制效应,在表面电场分布中引入新的电场峰而使横向表面电场分布均匀,提高了器件的击穿电压.通过优化部分N型埋层的位置和参数,利用仿真软件ISE分析表明,新型REBULF SJ-LDMOS的击穿电压较一般LDMOS提高了49%左右,较文献提出的buffered SJ-LDMOS结构提高了30%左右.
In order to meet the requirements of power double-diffused MOSFET (LDO) devices for power integrated circuits (ICs), a N-type buffer layer REBULF (N-type buffer layer) This structure not only eliminates the N-channel SJ-LDMOS substrate-assisted depletion effect caused by the P-type substrate, but also completely compensates the charges in the N and P regions of the super junction, At the same time, some electric field modulation effects of N-type buffer layer of REBULF are utilized to introduce a new electric field peak in the surface electric field distribution to make the lateral surface electric field uniform and improve the breakdown voltage of the device. By optimizing the location of partial N-type buried layer and The simulation results show that the breakdown voltage of the new REBULF SJ-LDMOS is about 49% higher than that of the conventional LDMOS, which is 30% higher than that of the buffered SJ-LDMOS proposed in the literature.