建立了一个价带附近的界面态密度分布模型 ,并用该模型较好地模拟了 6 H- Si C PMOS器件的阈值电压随温度变化的趋势、C- V特性以及转移特性 .理论 C- V特性曲线是用数值解泊松方程的方法得到的 ,在解泊松方程的过程中考虑了场致离化效应 .由于 Si C PMOS器件的源漏电阻比较大 ,因此 ,在计算强反型情况下的漏电流时 ,同时考虑了源漏电阻的影响 .结果表明 ,源漏电阻对漏电流的影响很大 A model for the distribution of density of states near the valence band was established and the model was used to simulate the trend of the threshold voltage of the 6 H-Si C PMOS devices with temperature, C-V characteristics and transfer characteristics. The curve is obtained by numerical solution of the Poisson’s equation, and the field ionization effect is taken into account in solving the Poisson’s equation. Since the source-drain resistance of the Si C PMOS device is relatively large, in the calculation of strong inversion Of the leakage current, while taking into account the source and drain resistance of the results show that the source and drain resistance of the leakage current is greatly affected