在国际半导体技术蓝图(ITRS)指定的22nm节点中[1],该产业将在两种竞争的光刻解决方案中进行选择,这将取决于其产品的发展路线图。在某些情况下,业界甚至可能会同时使用两种方案。这两种竞争方案就是极紫外光刻技术(EUVL)和32nm节点由193nm浸没式双重图形光刻(DPL)扩展到多图形的光刻技术。讨论了两种技术,比较了两种技术所需的关键解决方案的现状,以及存在的挑战。 In the 22nm node designated by the International Semiconductor Technology Roadmap (ITRS) [1], the industry will choose between two competing lithography solutions, depending on the roadmap for its product. In some cases, the industry may even use both. Both of these competing solutions are lithography techniques that extend EUVL and 32nm nodes into a multi-pattern by 193nm immersion dual patterning (DPL). Two technologies are discussed, comparing the current status of the key solutions required by both technologies, as well as the challenges that exist.