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利用氧化层动态电流弛豫谱分析方法，测试分析了在周期性电场应力下ＦＬＯＴＯＸＭＯＳ管隧道氧化层中陷阱电荷的特性，为研究陷阱电荷对ＦＬＯＴＯＸ ＥＥＰＲＯＭ 阈值电压的影响提供了实验依据。在＋ １１ Ｖ、－ １１ Ｖ 周期性老化电压下所产生的氧化层陷阱电荷饱和密度分别为－ １．８×１０１１ ｃｍ － ２和－ １．４×１０１１ ｃｍ － ２，平均俘获截面分别为５．８×１０－ ２０ ｃｍ ２ 和７．２×１０－ ２０ ｃｍ ２，有效电荷中心距分别为３．８ ｎｍ 和４．３ ｎｍ ，界面陷阱电荷饱和密度分别为６．５４×１０９ ｃｍ － ２ｅＶ－ １和－ ３．８×１０９ ｃｍ － ２ｅＶ－ １，平均俘获截面分别为１．１２×１０－ １９ ｃｍ ２ 和４．９×１０－ １９ ｃｍ ２。
The characteristics of trap charge in the oxide layer of FLOTOXMOS tunnel under cyclic electric field stress were tested and analyzed by the dynamic current relaxation analysis of oxide layer. The experimental evidence was provided to study the effect of trap charge on the threshold voltage of FLOTOX EEPROM. The charge saturation density of the oxide layer trapped at + 11 V and - 11 V is-1.8 × 10 11 cm -2 and -1.4 × 10 11 cm -2, respectively. The average capture cross sections are 5 .8 × 10-20 cm 2 and 7.2 × 10-20 cm 2, the effective charge centers are 3.8 nm and 4.3 nm, respectively, and the interfacial charge saturation densities are 6.54 × 109 cm -2eV - 1 and - 3.8 × 109 cm - 2eV - 1 with average capture cross sections of 1.12 × 10-19 cm 2 and 4.9 × 10-19 cm 2, respectively.