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磷化铟(InP)是重要的化合物半导体材料,在微波、毫米波器件以及抗辐照太阳电池等领域有着广泛的应用。由于InP材料的硬度较小,并且易于解理,因此InP材料的切割具有较大的技术难度。对InP晶体的多线切割工艺进行了研究,并重点分析了多线切割工艺中工艺参数设置(如切割速度、切割线张力等)对InP切割片几何参数的影响。实验结果表明,InP不但可以采用多线切割技术进行切割,而且通过调整切割工艺参数,如适当提高切割速度、增加切割线张力等可以获取几何参数精度较高的InP切割片。
Indium phosphide (InP) is an important compound semiconductor material and has been widely used in microwave, millimeter wave devices and anti-irradiation solar cells. Because InP material hardness is small, and easy to cleave, InP material cutting has greater technical difficulty. The multi-line cutting process of InP crystal was studied, and the influence of process parameters setting (such as cutting speed and cutting line tension) on the geometrical parameters of InP cutting plate was analyzed emphatically. Experimental results show that InP can not only cut with multi-line cutting, but also obtain InP cut with high geometric parameters by adjusting the cutting parameters, such as increasing the cutting speed and increasing the tension of the cutting line.