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通过分析半导体桥(Semiconductor Bridge,SCB)在相同电容不同电压下的电压电流曲线和桥面的烧蚀情况,研究了SCB的放电特性。实验发现:在相同电容下,随着充电电压的升高,SCB从无等离子体到有等离子体产生,且桥面的烧蚀程度增大。在低电压无等离子体时,电压和电流几乎同时断开;高电压产生等离子体时,由于等离子体是导体,在电压断开后电流持续一段时间断开。小电容放电时,其时间常数较小,较小的能量就可以将药剂点燃。
The discharge characteristics of SCB were studied by analyzing the voltage and current curves and the ablation of the bridge surface at the same capacitance and voltage of the semiconductor bridge (SCB). The experimental results show that at the same capacitance, the SCB changes from plasma-free to plasma with the increase of charging voltage, and the degree of ablation of the bridge deck increases. At low voltage without plasma, the voltage and current are almost simultaneously disconnected; when the plasma is produced by high voltage, the current is interrupted for a period of time after the voltage is disconnected because the plasma is a conductor. Small capacitor discharge, the smaller the time constant, the smaller the energy can be lit pharmaceutical.