用光热电离光谱方法研究了硅中硼受主杂质能级在０～１１Ｔ磁场下的塞曼效应。观察到硅中硼受主激发态的塞曼分裂与移动。实验结果与讨论表明：由于价带的复杂性、浅受主的基态和激发态在磁场下简并的解除以及大的空穴有效质量，硅中浅受主的塞曼效应较浅施主更为复杂 The Zeeman effect of boron acceptor impurities in silicon at 0 ~ 11T magnetic field was studied by photothermal ionization spectroscopy. It is observed that Zeeman splitting and moving of boron-excited states in silicon. The experimental results and discussion show that due to the complexity of the valence band, the relaxation of the shallow acceptor’s ground state and excited state under the magnetic field and the large effective mass of holes, the Zeeman effect of shallow acceptor in silicon is more complex