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将组合技术和离子束技术结合起来，用于硅基发光材料的研究。用组合离子束技术在硅 基材料上制备了６４个直径为２ｍｍ的单元──材料芯片，并对硅基材料芯片各单元进行了卢瑟辐 背散射、质子弹性散射和扫描阴极射线发光特性分析。
The combination of technology and ion beam technology, for the study of silicon-based light-emitting materials. Sixty-two 2mm-diameter material chips were fabricated on silicon-based materials by the combined ion beam technique. The back propagation, proton-elastic scattering and scanning cathodoluminescent properties of the Si-based material chips were analyzed. .