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由于锑、钠、钾、铯型光电阴极所固有的性质,使得对这类光电阴极的研究变得十分复杂。事实上,光电阴极的化学剂量成分及其晶体结构、纯度、光学性质等都是决定光电效应的参量。用X射线衍射仪研究光电阴极的结构,能够了解到共存于薄膜中的各种不同的晶态,结构方式以及晶体的外延生长。本文大部分篇幅是关于用俄歇谱仪研究杂质和杂质对薄膜光电发射的影响。如S、Cl、C、O这些元素和碱金属本身都可能是在薄膜制造过程中掺入薄膜内或其表面的主要杂质。最终,基本参量,例如可能相的体积比(特别是SbNa_2K和SbNa_3的体积比)和随薄膜厚度而变化的逸出深度,都可以由光电阴极制备过程中所确定的光学参量(n,k,d)来说明。同时,对于其他参量,诸如基底-薄膜界面上的光电子复合速度ν和薄膜的光学不均匀性,也给予了重视。
Owing to the inherent properties of antimony, sodium, potassium and cesium-type photocathodes, the research on such photocathodes has become quite complicated. In fact, the chemical composition of the photocathode and its crystal structure, purity, optical properties are all the parameters that determine the photoelectric effect. Using X-ray diffractometer to study the structure of photocathode, we can know the different crystalline states, structure modes and the epitaxial growth of the crystal coexist in the thin film. Most of this article is about using Auger spectroscopy to study the effects of impurities and impurities on the photoemission of thin films. Elements such as S, Cl, C, O and alkali metals themselves may be major impurities incorporated into or on the surface of the film during film manufacturing. Finally, the basic parameters, such as the volume ratio of the possible phases (in particular, the volume ratio of SbNa_2K to SbNa_3) and the escape depth that varies with the film thickness can be determined from the optical parameters (n, k, d) to illustrate. At the same time, attention has also been given to other parameters, such as the photoelectron recombination velocity v at the substrate-film interface and the optical inhomogeneity of the film.